The main purposes of this thesis are the Low-Frequency Noise measurement of Silicon-Germanium Heterojunction Bipolar Transistors and its Power Spectrum Density Characterizing. The new generation 375 GHZ SiGe HBTs were measured in this work. We show that most of PSDs of the new generation SiGe HBTs have very ”bumpy” spectra which is contributed by GR noise sources. We investigated their basic ...